Central Semiconductor CDM2206-800LR SL PBFREE MOSFET N沟道 800V 低电阻场效应管 6.0A 2.8nC 0.8欧姆

Technology: Si

Unit Weight: 3.698 g

Channel Mode: Enhancement

Mounting Style: Through Hole

Qg - Gate Charge: 24.3 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 110 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 800 mOhms

Vds - Drain-Source Breakdown Voltage: 800 V