Central Semiconductor CDM4-600LR TR13 PBFREE MOSFETs 600V N沟道 PFC FET 0.65欧姆 30Vgs 38W

Technology: Si

Unit Weight: 4 g

Channel Mode: Enhancement

Mounting Style: Through Hole

Qg - Gate Charge: 16.63 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 38 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 650 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V