Central Semiconductor CDM7-650 TR13 PBFREE MOSFETs 650V N沟道 PFC FET 30Vgs 5.0nC 1.35欧姆

Technology: Si

Unit Weight: 4 g

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 16.8 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 140 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.35 Ohms

Vds - Drain-Source Breakdown Voltage: 650 V