Central Semiconductor CDMSJ22013.8-650 SL MOSFETs 13.8A,650V 通孔MOSFET N沟道超结 T/L

Fall Time: 66 ns

Rise Time: 69 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: N-Channel Super Junction Power MOSFET

Qg - Gate Charge: 30 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 35.7 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 43 ns

Typical Turn-Off Delay Time: 171 ns

Id - Continuous Drain Current: 13.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 13 S

Rds On - Drain-Source Resistance: 280 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4 V