Central Semiconductor CDMSJ22029-650 SL MOSFETs 29A,650V 直插式MOSFET N沟道超级结 T/L

Fall Time: 77 ns

Rise Time: 79 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: N-Channel Super Junction Power MOSFET

Qg - Gate Charge: 51 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 33 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 62 ns

Typical Turn-Off Delay Time: 201 ns

Id - Continuous Drain Current: 29 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 23 S

Rds On - Drain-Source Resistance: 130 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4 V