Central Semiconductor CEDM7001 TR PBFREE MOSFETs N沟道MOSFET 20V 100mA

Technology: Si

Unit Weight: 0.750 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 566 pC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 100 mW

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Id - Continuous Drain Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Rds On - Drain-Source Resistance: 900 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V