Central Semiconductor CEDM7004 TR PBFREE MOSFETs 30V N沟增强型场效应管 8.0Vgs 1.78ID 100mW

Technology: Si

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 792 pC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 100 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Id - Continuous Drain Current: 1.78 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Rds On - Drain-Source Resistance: 3 Ohms

Vds - Drain-Source Breakdown Voltage: 30 V