Central Semiconductor CEDM8001VL TR PBFREE MOSFETs 20V P型增强型场效应管 10Vgs 100mA 100mW

Technology: Si

Unit Weight: 0.614 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 658 pC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 100 mW

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Id - Continuous Drain Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Rds On - Drain-Source Resistance: 8 Ohms

Vds - Drain-Source Breakdown Voltage: 20 V