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Technology: Si
Unit Weight: 3 mg
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Qg - Gate Charge: 1.2 nC
Number of Channels: 2 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 350 mW
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Id - Continuous Drain Current: 650 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
Rds On - Drain-Source Resistance: 360 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
