Central Semiconductor CMLDM8120G TR PBFREE MOSFETs P沟增强型场效应管 20VDS 8.0VGS

Technology: Si

Unit Weight: 3 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 3.56 nC

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 350 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Id - Continuous Drain Current: 860 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Rds On - Drain-Source Resistance: 150 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V