Central Semiconductor CMPDM7003 TR PBFREE MOSFET N沟增强型场效应管 50Vds 50Vdg 350pD

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 764 pC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 350 mW

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Id - Continuous Drain Current: 280 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Rds On - Drain-Source Resistance: 3 Ohms

Vds - Drain-Source Breakdown Voltage: 50 V