Central Semiconductor CMPT3646 TR PBFREE 双极型晶体管 NPN 40Vcbo 40Vceo 15Vceo 5.0 350mW

Technology: Si

Unit Weight: 1.430 g

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 350 mW

Gain Bandwidth Product fT: 350 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 40 V

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 15 V

Collector-Emitter Saturation Voltage: 500 mV