Central Semiconductor CMRDM7590 TR PBFREE MOSFETs 20V P型增强型场效应管 8.0Vgs 125mW 0.5mm

Technology: Si

Unit Weight: 270 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 500 pC

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 125 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Id - Continuous Drain Current: 140 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Rds On - Drain-Source Resistance: 5 Ohms

Vds - Drain-Source Breakdown Voltage: 20 V