Central Semiconductor CWDM3011P TR13 PBFREE MOSFET

Vgs(th): 3 V

Vgs (Max): 20V

Gate Charge (Qg): 80nC

Power consumption: 2.5W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 30V

Continuous drain current: 11A

Input Capacitance (Ciss): 3100pF

Operating temperature range: -55 to 150C

Field-effect transistor type: P-CH

Drain to Source on-state resistance: 20mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V