Central Semiconductor MJE520 PBFREE 双极型晶体管 BJTs 30Vcbo 30Vceo 4.0Vebo 3.0A 25W

Unit Weight: 1 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 25 W

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 25

Collector- Emitter Voltage VCEO Max: 30 V