Central Semiconductor MPS6523 TIN/LEAD 双极型晶体管 PNP 25Vcbo 25Vceo 4.0Vebo 50mA 3.5pF

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 625 mW

DC Current Gain hFE Max: 600 at 10 V, 2 mA

Gain Bandwidth Product fT: 350 MHz

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 25 V

Continuous Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 300 at 10 V, 2 mA

Collector- Emitter Voltage VCEO Max: 25 V

Collector-Emitter Saturation Voltage: 500 mV