Central Semiconductor MPSA29 TIN/LEAD 达林顿晶体管 NPN 100Vcbo 100Vces 12Vebo 500mA 625mW

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 625 mW

Gain Bandwidth Product fT: 125 MHz

Emitter- Base Voltage VEBO: 12 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 10000 at 10 mA, 5 V

Collector- Emitter Voltage VCEO Max: 100 V