Central Semiconductor MPSA77 TRA TIN/LEAD 达灵顿晶体管 PNP 60Vcbo 60Vces 10Vebo 500mA 625mW

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 625 mW

Gain Bandwidth Product fT: 125 MHz

Emitter- Base Voltage VEBO: 10 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 10000 at 10 mA, 5 V

Maximum Collector Cut-off Current: 100 nA

Collector- Emitter Voltage VCEO Max: 60 V