Central Semiconductor MPSD04 TIN/LEAD 达灵顿晶体管 NPN 500Vcbo 25Vceo 10Vebo 100mA 6.0pF

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 10 V

DC Collector/Base Gain hfe Min: 1000 at 5 V, 300 mA