Central Semiconductor MPSH10 PBFREE 射频双极型晶体管 NPN 射频放大器/振荡器

Technology: Si

Unit Weight: 453.600 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Type: Bipolar

Operating Frequency: 100 MHz

Transistor Polarity: NPN

Emitter- Base Voltage VEBO: 3 V

Continuous Collector Current: 50 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 60

Collector- Emitter Voltage VCEO Max: 25 V