Central Semiconductor PN4393 TIN/LEAD JFETs N型 40Vgd 40Vgs 50mA 625mW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 625 mW

Gate-Source Cutoff Voltage: 3 V

Maximum Drain Gate Voltage: 40 V

Drain-Source Current at Vgs=0: 30 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Rds On - Drain-Source Resistance: 100 Ohms

Vgs - Gate-Source Breakdown Voltage: 40 V