Central Semiconductor PN5132 TIN/LEAD 双极型晶体管 NPN 20Vcbo 20Vceo 3.0Vebo 10mA 3.5pF

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

DC Current Gain hFE Max: 400 at 10 V, 10 mA

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 3 V

Collector- Base Voltage VCBO: 20 V

DC Collector/Base Gain hfe Min: 30 at 10 V, 10 mA

Collector-Emitter Saturation Voltage: 2 V