Central Semiconductor PN918 TIN/LEAD 射频双极型晶体管 NPN 30Vcbo 15Vceo 3Vebo 50mA 200mW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Type: Bipolar

Transistor Polarity: NPN

Pd - Power Dissipation: 200 mW

Emitter- Base Voltage VEBO: 3 V

Continuous Collector Current: 50 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 20 at 3 mA, 1 V

Collector- Emitter Voltage VCEO Max: 15 V