Central Semiconductor TIP50 TIN/LEAD 双极型晶体管 BJTs 500Vcbo 400Vceo 5.0V IC 5A 40W

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 40 W

DC Current Gain hFE Max: 150 at 0.3 A, 10 V

Gain Bandwidth Product fT: 10 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 500 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 30 at 0.3 A, 10 V

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 1 V