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Gain: 10 dB, 13 dB
Technology: GaAs
Output Power: 16 dBm
Transistor Type: pHEMT
Operating Frequency: 26 GHz
Pd - Power Dissipation: 300 mW
Id - Continuous Drain Current: 120 mA
Maximum Operating Temperature: + 150 C
Forward Transconductance - Min: 160 mS
Vds - Drain-Source Breakdown Voltage: 4 V
