Comchip Technology BC857AW-G 双极型晶体管 BJTs -50V，0.1A

Technology: Si

Unit Weight: 6 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 150 mW

DC Current Gain hFE Max: 250

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 125

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 650 mV