Comchip Technology BC858C-HF 双极型晶体管 BJTs - PNP 晶体管 -30V -0.1A 无卤素

Technology: Si

Unit Weight: 112 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 250 mW

DC Current Gain hFE Max: 800

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 30 V

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 420

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 650 mV