Comchip Technology CMSBN4612-HF MOSFET 双N沟道 22VDS 12VGS 2A CSPB1313-4

Fall Time: 10 us

Rise Time: 3.8 us

Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 7.2 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.4 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 0.7 us

Typical Turn-Off Delay Time: 10 us

Id - Continuous Drain Current: 6 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 1 S

Rds On - Drain-Source Resistance: 36 mOhms

Vds - Drain-Source Breakdown Voltage: 22 V

Vgs th - Gate-Source Threshold Voltage: 1.3 V