Comchip Technology MMBT3906-HF 双极型晶体管 BJTs - 双极晶体管 晶体管 I=-200mA

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 300 mW

DC Current Gain hFE Max: 300

Gain Bandwidth Product fT: 250 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 40 V

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 60

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 300 mV