Diodes Incorporated 2DD1621T-13 双极晶体管 BJTs 1W 25V

Width: 2.5 mm

Height: 1.5 mm

Length: 4.5 mm

Technology: Si

Unit Weight: 52 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 200 at 100 mA, 2 V

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 30 V

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 65 at 1.5 A, 2 V

Collector- Emitter Voltage VCEO Max: 25 V

Collector-Emitter Saturation Voltage: 400 mV