Diodes Incorporated BC857BFZ-7B 双极型晶体管 PNP SS晶体管 -100mA 45Vceo 0.435W 175mV

Technology: Si

Unit Weight: 11.861 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 310 mW

DC Current Gain hFE Max: 475

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: - 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 220

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 250 mV