Diodes Incorporated BFS17NTA 射频双极型晶体管 单个NPN 3.2GHz 50mA 330mW

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 3.2 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 310 mW

Emitter- Base Voltage VEBO: 3 V

Continuous Collector Current: 50 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 56 at 5 mA, 10 V

Collector- Emitter Voltage VCEO Max: 11 V