Diodes Incorporated BST52TA 达林顿晶体管 NPN 达林顿

Width: 2.5 mm

Height: 1.5 mm

Length: 4.5 mm

Unit Weight: 52 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 1000

Emitter- Base Voltage VEBO: 10 V

Collector- Base Voltage VCBO: 90 V

Continuous Collector Current: 500 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 1000 at 150 mA at 10 V, 2000 at 500 mA at 10 V

Collector- Emitter Voltage VCEO Max: 80 V