Diodes Incorporated DDTA143EUA-7 Pre-Biased Bipolar Transistor

R1/R2: 1

Rated power: 200mW

Mounting Type: Surface Mount

Power-Maximum: 200mW

Transistor type: PNP-Prebias+Diode

Collector current: 100mA

DC electricity gain: 20@10mA|5V

Frequency-Transition: 250MHz

Resistance-Base (R1): 4.7kOhm

Vce Saturation (maximum): 300mV@500uA|10mA

Collector-emitter voltage: 50V

Resistance-Emitter base (R2): 4.7kOhm

DC current gain (hFE) (minimum): 20@10mA,5V

Current-Collector (Ic) (maximum): 100mA

Current-Collector cutoff (maximum): 500nA

Voltage-Collector-emitter breakdown (maximum): 50V

Datasheet