Diodes Incorporated DDTB114TC-7-F Pre-Biased Bipolar Transistor

Rated power: 200mW

Mounting Type: Surface Mount

Power-Maximum: 200mW

Transistor type: PNP-Prebias

Collector current: 500mA

DC electricity gain: 100@5mA|5V

Frequency-Transition: 200MHz

Resistance-Base (R1): 10kOhm

Vce Saturation (maximum): 300mV@2.5mA|50mA

Collector-emitter voltage: 50V

DC current gain (hFE) (minimum): 100@5mA,5V

Current-Collector (Ic) (maximum): 500mA

Current-Collector cutoff (maximum): 500nA(ICBO)

Voltage-Collector-emitter breakdown (maximum): 50V

Datasheet