Diodes Incorporated DGTD65T15H2TF IGBT晶体管 IGBT 600V-X

Technology: Si

Unit Weight: 2 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 48 W

Gate-Emitter Leakage Current: +/- 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.65 V

Continuous Collector Current at 25 C: 30 A