Diodes Incorporated DMC1229UFDB-13 MOSFET增强型场效应管 12V Vdss 8V VGss

Fall Time: 4.1 ns, 26.4 ns

Rise Time: 10.5 ns,11.5 ns

Technology: Si

Unit Weight: 6.500 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 19.6 nC, 17.9 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 1.4 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 5 ns, 5.7 ns

Typical Turn-Off Delay Time: 16.6 ns, 27.8 ns

Id - Continuous Drain Current: 5.6 A, 3.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 17 mOhms, 37 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 400 mV, 1 V