Diodes Incorporated DMC2450UV-7 MOSFETs 复合对增强型场效应管 20Vdss 12Vgss 0.45W

Width: 1.2 mm

Height: 0.6 mm

Length: 1.6 mm

Fall Time: 10.54 ns, 19.2 ns

Rise Time: 7.28 ns, 4.3 ns

Technology: Si

Unit Weight: 6 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Qg - Gate Charge: 500 pC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 450 mW

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 4.06 ns, 8.5 ns

Typical Turn-Off Delay Time: 13.74 ns, 20.2 ns

Id - Continuous Drain Current: 1.03 A, 700 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 500 mOhms, 1 Ohms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 900 mV, 1 V