Diodes Incorporated DMC3016LNS-7 MOSFETs MOSFET BVDSS 31V-40V

Technology: Si

Unit Weight: 144 g

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Qg - Gate Charge: 21 nC, 9.5 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 9 A, 6.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 16 mOhms, 28 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.4 V, 2.4 V