Diodes Incorporated DMC3400SDW-13 MOSFETs 30V 补偿对 增强型 20Vgs 55pF 0.6nC

Fall Time: 18.8 ns, 19 ns

Rise Time: 3.5 ns, 8.8 ns

Technology: Si

Unit Weight: 7.500 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 1.4 nC, 1.3 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 390 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 3.8 ns, 5.7 ns

Typical Turn-Off Delay Time: 25.2 ns, 35 ns

Id - Continuous Drain Current: 650 mA, 450 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 400 mOhms, 900 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 800 mV, 1 V