Diodes Incorporated DMN2024UDH-7 MOSFETs MOSFET BVDSS：8V-24V

Fall Time: 434 ns

Rise Time: 140 ns

Technology: Si

Unit Weight: 65 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 7.1 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.76 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 98 ns

Typical Turn-Off Delay Time: 1024 ns

Id - Continuous Drain Current: 5.2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 23 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 350 mV