Diodes Incorporated DMN2025UFDB-7 MOSFETs MOSFET BVDSS：8V-24V U-DFN2020-6 T&R 3K

Fall Time: 9.3 ns

Rise Time: 5.4 ns

Technology: Si

Unit Weight: 65 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Qg - Gate Charge: 12.3 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.4 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 3.4 ns

Typical Turn-Off Delay Time: 17.6 ns

Id - Continuous Drain Current: 6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 25 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 500 mV