Diodes Incorporated DMN2990UFA-7B MOSFETs MOSFET BVDSS: 8V-24V X2-DFN0806-3 T&R 10K

Fall Time: 6.4 ns

Rise Time: 3.3 ns

Technology: Si

Unit Weight: 1 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 500 pC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 400 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 4 ns

Typical Turn-Off Delay Time: 19 ns

Id - Continuous Drain Current: 510 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 180 mS

Rds On - Drain-Source Resistance: 990 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V