Diodes Incorporated DMN3013LDG-13 MOSFETs MOSFET BVDSS：25V-30V

Fall Time: 2 ns, 2.2 ns

Rise Time: 6.2 ns, 6.7 ns

Technology: Si

Unit Weight: 30 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Qg - Gate Charge: 5.7 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.16 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 4.2 ns, 4.4 ns

Typical Turn-Off Delay Time: 9.7 ns, 10.4 ns

Id - Continuous Drain Current: 15 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 14.3 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 750 mV