Diodes Incorporated DMN3022LDG-13 MOSFETs MOSFET BVDSS：25V-30V

Fall Time: 1.9 ns, 2.4 ns

Rise Time: 1.8 ns, 2.5 ns

Technology: Si

Unit Weight: 30 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Qg - Gate Charge: 3.7 nC, 8 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.96 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 4.5 ns, 5.6 ns

Typical Turn-Off Delay Time: 7.2 ns, 11.7 ns

Id - Continuous Drain Current: 15 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 22 mOhms, 8 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V, 800 mV