Diodes Incorporated DMN33D9LV-13 MOSFETs MOSFET BVDSS：25V-30V SOT563 T&R 10K

Fall Time: 13.6 ns

Rise Time: 2.6 ns

Technology: Si

Unit Weight: 6 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 1.23 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 430 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 2.9 ns

Typical Turn-Off Delay Time: 18.2 ns

Id - Continuous Drain Current: 350 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 2.4 Ohms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.4 V