Diodes Incorporated DMN3730UFB4-7B MOSFETs MOSFET BVDSS：25V-30V

Fall Time: 13 ns

Rise Time: 2.8 ns

Technology: Si

Unit Weight: 1 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 1.6 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 690 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 3.5 ns

Typical Turn-Off Delay Time: 38 ns

Id - Continuous Drain Current: 910 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 40 mS

Rds On - Drain-Source Resistance: 460 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 450 mV