Diodes Incorporated DMN65D9L-7 MOSFETs MOSFET BVDSS：41V-60V SOT23 T&R 3K

Fall Time: 22 ns

Rise Time: 3.6 ns

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 400 fC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 270 mW

Vgs - Gate-Source Voltage: - 16 V, + 16 V

Typical Turn-On Delay Time: 3.7 ns

Typical Turn-Off Delay Time: 102 ns

Id - Continuous Drain Current: 335 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 4 Ohms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V