Diodes Incorporated DMN67D8LW-13 MOSFETs MOSFET 漏极-源极击穿电压 (BVDSS)

Technology: Si

Unit Weight: 6 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 821 pC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 470 mW

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 240 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 5 Ohms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V