Diodes Incorporated DMP2215L-7 MOSFET 小信号 P沟道

Width: 1.3 mm

Height: 1 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 4.3 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.08 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Id - Continuous Drain Current: 2.7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 100 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 450 mV